Recombination behavior of stacking faults in SiC p-i-n diodes

被引：1
|
作者：
Maximenko, S. I. [1 ]
Pirouz, P.
Sudarshan, T. S.
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA
来源：
Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷
关键词：
current degradation; PiN diodes; stacking faults; recombination;
D O I：
10.4028/www.scientific.net/MSF.527-529.367
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been investigated by the technique of electron beam induced current (EBIC). The recombination behavior of C- and Si-core dislocations is discussed. It is proposed that nonradiative recombination significantly exceeds radiative recombination on both the C- and Si-core partial dislocations. At the same time, predominantly radiative recombination takes place in the faulted planes that presumably act as quantum wells.
引用
收藏
页码：367 / 370
页数：4
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