Effect of GaSb Addition and Sb Doping on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Solid Solutions

被引：2

作者：

Du Zhengliang ^{[1
]}

Cui Jiaolin ^{[1
]}

Zhu Tiejun ^{[2
]}

Zhao Xinbing ^{[2
]}

机构：

[1] Ningbo Univ Technol, Ningbo 315016, Zhejiang, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2014年 / 43卷 / 11期

基金：

中国国家自然科学基金;

关键词：

magnesium suicides; thermoelectric properties; thermoelectric materials; isoelectronic substitution; EFFICIENCY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mg2Si0.487-2xSn0.5(GaSb)(x)Sb-0.013 (0.04 <= x <= 0.10) solid solutions were synthesized by a B2O3 flux method followed by hot pressing. X-ray power diffraction analysis confirms that single-phased samples are obtained. It is found that the Sb-doping effectively enhances the electrical conductivity. The Seebeck coefficients increase while the electrical conductivity decreases for Mg2Si0.487-2xSn0.5(GaSb)(x)Sb-0.013 with the increase of temperature. With increasing of GaSb content the electrical conductivity first increases and then decreases. Among all the samples, Mg2Si0.287Sn0.5(GaSb)(0.1)Sb-0.013 sample has the lowest lattice thermal conductivity which is about 15% lower than that of Mg2Si0.5Sn0.5 ([11]) at room temperature. A maximum dimensionless figure of merit of 0.61 at 720 K has been obtained for Mg2Si0.327Sn0.5(GaSb)(0.08)Sb-0.013 mainly due to its high electrical conductivity, which is obviously higher than that (0.019 at 540 K) of Mg2Si0.5Sn0.5 ([11]).

引用

页码：2623 / 2626

页数：4

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