Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy

被引：8
|
作者：
Li, YF [1 ]
Ye, XL [1 ]
Xu, B [1 ]
Liu, FQ [1 ]
Ding, D [1 ]
Jiang, WH [1 ]
Sun, ZZ [1 ]
Zhang, YC [1 ]
Liu, HY [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 218卷 / 2-4期
基金：
中国国家自然科学基金;
关键词：
quantum dots; molecular beam epitaxy; InAs/InP;
D O I：
10.1016/S0022-0248(00)00561-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Self-assembled InAs nanostructures on (0 0 1)InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies of InAs nanostructures depend strongly on the underlying alloy. Through introducing a lattice-matched underlying InAlGaAs layer on InAlAs buffer layer, the InAs quantum dots (QDs) can be much more uniform in size and great improvement in PL properties can be attained at the same time. In particular, 1.55 mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (0 0 1)InP substrate with underlying InAlGaAs layer. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：451 / 454
页数：4
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