Synthesis of graphene quantum dots doped CdS composites for photoelectric properties

被引:3
作者
Lei, Yun [1 ]
Lin, Yuanyuan [1 ]
Wang, Jinyang [1 ]
Zhang, Zheng [1 ]
Jiang, Zicong [1 ]
Ouyang, Zhong [1 ]
Hu, Jiaxin [1 ]
机构
[1] Wuhan Univ Technol, Sch Resources & Environm Engn, Luoshi Rd 122, Wuhan 430070, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
CdS/GQDs composites; GQDs contents; optical property; photoelectric response; SOLVOTHERMAL SYNTHESIS; PHOTOCATALYST; NANOCRYSTALS; PERFORMANCE; OXIDE; ELECTROCHEMILUMINESCENCE;
D O I
10.1088/2053-1591/ab561b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cadmium sulfide/ graphene quantum dots (CdS/GQDs) composites were fabricated by a simple one-step solvothermal method using cadmium acetate and thiourea as precursors for Cd and S, respectively. GQDs were compounded with CdS, which resulted in a decrease in zeta potential. The lattice fringes of 0.34 nm and 0.33 nm were ascribed to the (002) direction of GQDs and CdS, respectively. The UV absorption spectrum of CdS/GQDs composites presented a red-shifted, and the photoluminescence intensity of CdS/GQDs composites declined upon the addition of GQDs. The photoelectric properties of CdS/GQDs composites were significantly stronger than those of pure CdS. The relationships between photoelectric responses and the contents of GQDs were investigated. The photocurrent density reached a maximum of 3.58;;10(?6) A cm(?2) when the content of GQDs was 0.4 wt%, but the photocurrent density of pure CdS was 0.15;;<i 10(?6) A cm(?2). The photocurrent value was 23 times higher than that of pure CdS. Meanwhile, the impedance value achieved the minimum.
引用
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页数:8
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