Factors influencing the dressing rate of chemical mechanical polishing pad conditioning

被引:20
作者
Tso, Pei-Lum [1 ]
Ho, Shuo-Young [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu 300, Taiwan
关键词
chemical mechanical polishing; polishing pad; pad conditioning; dressing rate;
D O I
10.1007/s00170-006-0501-y
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The primary consumables in the chemical mechanical polishing (CMP) process are the polishing pad and the slurry. Among those consumables, the polishing pad significantly influences the stability of the process and the cost of consumables (CoC). Furthermore, the small holes on the pad surface will be filled by the reactant from the CMP process, and the surface of the pad will deposit hard glazing gradually. The glazing not only reduces the ability of absorbing slurry of the pad, but it also causes scratching on the work piece. In order to maintain the stability of the CMP process and return to an ideal pad surface status, we must condition the pad according to a regular time schedule. At the same time, if we use different pad conditioning factors, the dressing rate of the CMP pad will be different. Most important of all, we have to decrease the pad material abrasion due to the pad conditioning process. In conclusion, if we can understand the influence of the dressing rate and conditioning factors effectively, it will be useful for maintaining CMP process stability, extending pad life, and reducing CoC and non-processing time.
引用
收藏
页码:720 / 724
页数:5
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