A consistent approach towards Bi doping mechanism in chalcogenide glasses from Cp measurement in Ge-Se-Te-Bi system

被引:22
作者
Bhat, NA [1 ]
Sangunni, KS [1 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
关键词
disordered systems; semiconductors; heat capacity; thermodynamic properties;
D O I
10.1016/S0038-1098(00)00340-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this paper, we are proposing a consistent approach to understand the mechanism of Bi doping in Ge-Se glasses by carrying out specific heat (C-p) measurement in Ge20Se70-xTe10Bix system for 0 less than or equal to x less than or equal to 11. The two softening temperatures exhibited by heat-treated samples are explained on the basis of 'microscopic phase separation'. The minimum in 'configurational heat capacity' (Delta C-p) at x = 7.5 for as-prepared glasses is related to be a feature of chemical threshold. A supporting evidence for three-fold coordination for Bi in line with the earlier structural studies is deduced. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:297 / 302
页数:6
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