Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy

被引：26

作者：

Aoki, T ^{[1
]}

Smith, DJ

Chang, Y

Zhao, J

Badano, G

Grein, C

Sivananthan, S

机构：

[1] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[2] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60607 USA

[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[4] Arizona State Univ, Ctr High Resolut Elect Microscopy, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1566462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface crater defects in HgCdTe epilayers grown by molecular-beam epitaxy have been investigated using cross-sectional scanning and transmission electron microscopy, as well as atomic force microscopy. These defects originated primarily within the HgCdTe films, and were shown to be associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te intergrowths with either semicoherent or incoherent grain boundaries, as well as small HgCdTe inclusions embedded within Te grains. (C) 2003 American Institute of Physics.

引用

页码：2275 / 2277

页数：3

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