p-n junction formed in structures with macro-porous silicon

被引:4
作者
Grigoras, K [1 ]
Jasutis, V [1 ]
Pacebutas, V [1 ]
Sabataityte, J [1 ]
Simkiene, I [1 ]
机构
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
关键词
porous silicon; solar cells; doping; diffusion;
D O I
10.1016/S0169-4332(00)00488-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Boron doped glasses, obtained from organic solution under low temperature and deposited by spin-on technique, were used to form a highly doped p(+)-n junction into structures with macro-porous silicon (PS) layer of 0.4-6 mu m thickness. The junction was found to lie about 2.5 mu m deeper than the bottom of the pores, and almost independent on their thickness. Enhanced boron diffusion was explained by a presence of local electric fields, caused by tensions present at the border between PS layer and crystalline substrate. Reflectivity values of less than 10% were obtained over 450-1050 nm wavelength range for samples with PS layer, confirming the light-trapping effect in electrochemically etched structures. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:532 / 537
页数:6
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