p-n junction formed in structures with macro-porous silicon

被引：4

作者：

Grigoras, K ^{[1
]}

Jasutis, V ^{[1
]}

Pacebutas, V ^{[1
]}

Sabataityte, J ^{[1
]}

Simkiene, I ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期

关键词：

porous silicon; solar cells; doping; diffusion;

D O I：

10.1016/S0169-4332(00)00488-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Boron doped glasses, obtained from organic solution under low temperature and deposited by spin-on technique, were used to form a highly doped p(+)-n junction into structures with macro-porous silicon (PS) layer of 0.4-6 mu m thickness. The junction was found to lie about 2.5 mu m deeper than the bottom of the pores, and almost independent on their thickness. Enhanced boron diffusion was explained by a presence of local electric fields, caused by tensions present at the border between PS layer and crystalline substrate. Reflectivity values of less than 10% were obtained over 450-1050 nm wavelength range for samples with PS layer, confirming the light-trapping effect in electrochemically etched structures. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：532 / 537

页数：6

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