Radio frequency ion source operated with field effect transistor based radio frequency system

被引：14

作者：

Ando, A. ^{[1
]}

Komuro, A. ^{[1
]}

Matsuno, T. ^{[1
]}

Tsumori, K. ^{[2
]}

Takeiri, Y. ^{[2
]}

机构：

[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808759, Japan

[2] Natl Inst Nat Sci, Natl Inst Fus Sci, Toki, Gifu 5095292, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2010年 / 81卷 / 02期

关键词：

field effect transistors; invertors; plasma density; plasma radiofrequency heating; HIGH-POWER; RF; GENERATION;

D O I：

10.1063/1.3279306

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Characteristics of radio frequency (RF) plasma production are investigated using a field effect transistor inverter power supply as an RF wave source. With the frequency of around 0.3 MHz, an electron density over 10(18) m(-3) is produced in argon plasma. Although lower densities are obtained in hydrogen plasma, it drastically increased up to 5x10(18) m(-3) with an axial magnetic field of around 100 G applied in the driver region. Effects of the magnetic field and gas pressure are investigated in the RF produced plasma with the frequency of several hundred kilohertz.

引用

页数：3

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