Fabrication of dry etched and subsequently passivated laser facets in GaAs/AlGaAs

被引：4

作者：

Deichsel, E ^{[1
]}

Franz, G

机构：

[1] Univ Ulm, D-89069 Ulm, Germany

[2] Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland

[3] Munich Univ Appl Sci, Munich, Bavaria, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 05期

关键词：

D O I：

10.1116/1.1786307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The aging behavior of edge emitting laser diodes based on GaAs/AlGaAs is investigated by comparing devices with facets that are alternatively cleaved or dry etched and consecutively treated with H2S. In this work we demonstrate that an in situ exposure to H2S gas is not sufficient to prevent ageing but an additional plasma treatment is rather required to obtain comparable ageing results to lasers with cleaved facets. (C) 2004 American Vacuum Society.

引用

页码：2201 / 2205

页数：5

共 18 条

[1] Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs (lambda=0.98 mu m) laser diodes [J].

Beister, G ;

Maege, J ;

Gutsche, D ;

Erbert, G ;

Sebastian, J ;

Vogel, K ;

Weyers, M ;

Wurfl, J ;

Daga, OP .

APPLIED PHYSICS LETTERS, 1996, 68 (18) :2467-2468

[2]

Buchmann P., 1989, Microelectronic Engineering, V9, P485, DOI 10.1016/0167-9317(89)90106-8

[3] INVESTIGATIONS OF AMMONIUM SULFIDE SURFACE TREATMENTS ON GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

COWANS, BA ;

DARDAS, Z ;

DELGASS, WN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :845-850

[4] Sulphur passivation of dry-etched AlGaAs laser facets [J].

Collot, P ;

Delalande, S ;

Olivier, J .

ELECTRONICS LETTERS, 1999, 35 (06) :506-508

[5]

Deichsel E, 2002, JPN J APPL PHYS 1, V41, P4279, DOI 10.1143/JJAP.41.42791

[6] High-power laser diodes with dry-etched mirror facets and integrated monitor photodiodes [J].

Deichsel, E ;

Eberhard, F ;

Jäger, R ;

Unger, P .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) :106-110

[7] High-rate etching of GaAs using chlorine atmospheres doped with a Lewis acid [J].

Franz, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03) :1542-1546

[8] Reactive ion etching of GaN and GaAs: Radially uniform processes for rectangular, smooth sidewalls [J].

Franz, G ;

Rinner, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01) :56-61

[9] REACTIVE ION ETCHING OF III/V SEMICONDUCTORS USING CARBON-CONTAINING GASES - A COMPREHENSIVE STATISTICAL APPROACH [J].

FRANZ, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) :2896-2903

[10] ROBUST REACTIVE ION ETCHING PROCESSES FOR GAAS/ALGAAS/ALAS BY APPLICATION OF STATISTICAL CONCEPTS [J].

FRANZ, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :1147-1151

← 1 2 →