High internal quantum efficiency of long wavelength InGaN quantum wells

被引：12

作者：

Marcinkevicius, Saulius ^{[1
]}

Yapparov, Rinat ^{[1
]}

Chow, Yi Chao ^{[2
]}

Lynsky, Cheyenne ^{[2
]}

Nakamura, Shuji ^{[2
]}

DenBaars, Steven P. ^{[2
]}

Speck, James S. ^{[2
]}

机构：

[1] KTH Royal Inst Technol, AlbaNova Univ Ctr, Dept Appl Phys, S-10691 Stockholm, Sweden

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 07期

基金：

瑞典研究理事会; 美国国家科学基金会;

关键词：

D O I：

10.1063/5.0063237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved and quasi-cw photoluminescence (PL) spectroscopy was applied to measure the internal quantum efficiency (IQE) of c-plane InGaN single quantum wells (QWs) grown on sapphire substrates using metal-organic chemical vapor deposition. The identical temperature dependence of the PL decay times and radiative recombination times at low temperatures confirmed that the low temperature IQE is 100%, which allowed evaluation of the absolute IQE at elevated temperatures. At 300 K, the IQE for QWs emitting in green and green-yellow spectral regions was more than 60%. The weak nonradiative recombination in QWs with a substantial concentration of threading dislocations and V-defects (similar to 2 x 10(8) cm(-2)) shows that these extended defects do not notably affect the carrier recombination.

引用

页数：4

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