Photoluminescence study of a bulk vapour grown CdTe crystal

被引：78

作者：

Halliday, DP ^{[1
]}

Potter, MDG ^{[1
]}

Mullins, JT ^{[1
]}

Brinkman, AW ^{[1
]}

机构：

[1] Univ Durham, Sci Labs, Dept Phys, Durham DH1 3LE, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

CdTe; photoluminescence; II-VI semiconductors; defect luminescence; bulk crystals;

D O I：

10.1016/S0022-0248(00)00755-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low-temperature photoluminescence has been used to profile the distribution of impurities and defects through a CdTe boule grown at 700 degreesC by the new "multi-tube" vapour-growth technique, The PL spectrum is dominated by an acceptor bound exciton band at 1.590 eV. We also observe eA(0) and DAP recombination. The Y luminescence band at 1.477 eV is also present and there are no other deep level bands observed. The identification of the luminescence bands is confirmed by temperature and intensity-dependent measurements and also by the strength of the phonon coupling. The PL data is used to map out the distribution of impurities and dislocations throughout the boule and supports previously published X-ray and defect etching data. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：30 / 38

页数：9

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