Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-Bismide alloy

被引：31
作者：
Feng, Gan
Oe, Kunishige
Yoshimoto, Masahiro
机构：
[1] Kyoto Inst Technol, Cooperat Res Ctr, Kyoto 6068585, Japan
[2] Kyoto Univ, Dept Elect, Kyoto, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 29-32期
关键词：
gaNAsBi; bismide alloy; dilute-nitride arsenides; thermal annealing; photoluminescence;
D O I：
10.1143/JJAP.46.L764
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the effect of postgrowth thermal annealing on undoped GaN0.014As0.954Bi0.032/GaAs structures grown by molecular-beam epitaxy. For the as-grown GaN0.014As0.954Bi0.032 film, the room-temperature photoluminescence (PL) spectrum shows poor emission efficiency. The PL intensity can be markedly improved by postgrowth annealing. The optimal annealing temperature is found to be similar to 700 degrees C. A blueshift of the PL peak during annealing was also observed in annealed GaN0.014As0.954Bi0.032 with a maximum value of similar to 27 meV. On the basis of high-resolution X-ray diffraction measurements, the mechanism for the blueshift of the GaN0.014As0.954Bi0.032 PL peak during annealing was studied.
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收藏
页码：L764 / L766
页数：3
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