Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

被引：13

作者：

Ji Mei ^{[1
]}

Wang Lei ^{[1
]}

Xiong Yuhua ^{[1
]}

Du Jun ^{[1
]}

机构：

[1] Gen Res Inst Nonferrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China

来源：

JOURNAL OF RARE EARTHS | 2010年 / 28卷 / 03期

关键词：

Gd2O3; high-k; metal-oxide-semiconductor (MOS); rare earths; GATE DIELECTRICS;

D O I：

10.1016/S1002-0721(09)60119-8

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor (MOS) capacitors. Compared with pure HfO2, the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current, thinner effective oxide thickness and less fixed oxide charges density. The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics, maximum capacitance, lowest leakage current of 9.35079x10(-7) A/cm(2), and minimum fixed oxide charge density of 3.59x10(9) cm(-2). The lower electronegativity and larger atomic radium of Gd contributed to the improvement in the leakage current for Gd2O3-doped HfO2 films. The electrical characteristics of Gd2O3-doped HfO2 thin film illustrated that it is a promising gate dielectric layer for future high-k gate dielectric applications.

引用

页码：396 / 398

页数：3

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