Picosecond time-resolved X-ray diffraction from Si(111) under high-power laser irradiation

被引：4

作者：

Hironaka, Y ^{[1
]}

Yazaki, A ^{[1
]}

Saito, F ^{[1
]}

Nakamura, KG ^{[1
]}

Kondo, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 10A期

关键词：

time-resolved X-ray diffraction; femtosecond laser; pulsed X-rays; silicon; dielectric breakdown;

D O I：

10.1143/JJAP.39.L984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Picosecond time-resolved X-ray diffraction is used to observe Si(111) under 300 ps pulsed laser irradiation at a power density above the damage threshold. The pulsed X-rays (of about 9 ps pulse width) are generated by focusing a femtosecond laser on an Fe target. The rocking curves are obtained with a time step of 50 ps. The transient lattice compression (0.9% at maximum) driven by laser-induced dielectric breakdown is directly observed.

引用

页码：L984 / L986

页数：3

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