Performance, degradation monitors, and reliability of the CHISEL injection regime

被引：8

作者：

Driussi, F ^{[1
]}

Esseni, D ^{[1
]}

Selmi, L ^{[1
]}

机构：

[1] Univ Udine, DIEGM, Dept Elect Managerial & Mech Engn, I-33100 Udine, Italy

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2004年 / 4卷 / 03期

关键词：

channel hot electron (CHE); channel initiated secondary electron (CHISEL); damage profiling; degradation monitor; Flash memories; hot carrier degradation; substrate bias;

D O I：

10.1109/TDMR.2004.837208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent results concerning the performance and reliability of the channel initiated secondary electron (CHISEL) injection regime, often used to boost the programming speed of Flash memories. In order to relate the CHISEL behavior to the physical conditions existing in the device, the injection efficiency of CHISEL is studied on single transistors. A comparison between the degradation in the CHISEL injection and in the channel hot electron (CHE) stress regime has been also performed, and the most relevant electrical monitor for the degradation is assessed. It is confirmed that the CHISEL mechanism is promising for the realization of faster and more efficient Flash memory cells.

引用

页码：327 / 334

页数：8

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