Amorphous silicon active pixel sensor readout circuit for digital imaging

被引:100
作者
Karim, KS [1 ]
Nathan, A
Rowlands, JA
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
[2] Univ Toronto, Sunnybrook & Womens Coll, Dept Med Biophys, Hlth Sci Ctr, Toronto, ON M4N 3M5, Canada
关键词
active pixel sensor (APS); amorphous silicon (a-Si); digital fluoroscopy; integrated pixel amplifier; medical imaging;
D O I
10.1109/TED.2002.806968
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, reading small PPS output signals requires external column charge amplifiers that produce additional noise and reduce the minimum readable sensor input signal. This work presents a current-mediated amorphous silicon active pixel readout circuit that performs on-pixel amplification of noise-vulnerable sensor input signals to minimize the effect of external readout noise sources associated with "off-chip" charge amplifiers. Results indicate excellent small-signal linearity along with A high, and programmable, charge gain. In addition, the active pixel circuit shows immunity to shift in threshold voltage that is characteristic of a-Si devices. Preliminary circuit noise results and analysis appear promising for its use in noise-sensitive, large-area, medical diagnostic imaging applications such as digital fluoroscopy.
引用
收藏
页码:200 / 208
页数:9
相关论文
共 22 条
[11]  
KARIM KS, 2001, P IEEE INT S CIRC SY, V5, P479
[12]   1/F NOISE [J].
KESHNER, MS .
PROCEEDINGS OF THE IEEE, 1982, 70 (03) :212-218
[13]   Additive noise properties of active matrix flat-panel imagers [J].
Maolinbay, M ;
El-Mohri, Y ;
Antonuk, LE ;
Jee, KW ;
Nassif, S ;
Rong, X ;
Zhao, Q .
MEDICAL PHYSICS, 2000, 27 (08) :1841-1854
[14]   CMOS ACTIVE PIXEL IMAGE SENSOR [J].
MENDIS, S ;
KEMENY, SE ;
FOSSUM, ER .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :452-453
[15]  
Mohan N, 2001, CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING 2001, VOLS I AND II, CONFERENCE PROCEEDINGS, P583, DOI 10.1109/CCECE.2001.933749
[16]  
NICHOLSON PW, 1974, NUCL ELECTRON, pCH5
[17]   1/f noise modeling in long channel amorphous silicon thin film transistors [J].
Rhayem, J ;
Rigaud, D ;
Valenza, M ;
Szydlo, N ;
Lebrun, H .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1983-1989
[18]  
SERVATI P, 2000, THESIS U WATERLOO WA
[19]  
STREET RA, 1995, MATER RES SOC S P, V377, P757
[20]   Analysis of temporal noise in CMOS photodiode active pixel sensor [J].
Tian, H ;
Fowler, B ;
Gamal, AF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (01) :92-101