Electrical properties of ITO/benzylated cyclodextrins (β-CDs (Bz))/Al diode structures

被引:16
作者
Bouzitoun, M.
Dridi, C.
Ben Chaabane, R.
Ben Ouada, H.
Gam, H.
Maidoub, M.
机构
[1] Fac Sci, Lab Phys & Chim Interfaces, Dept Phys, Monastir 5019, Tunisia
[2] Fac Sci, Lab Polymeres & Biopolymeres, Dept Chim, Monastir 5019, Tunisia
关键词
ITO/beta-CDs (Bz)/Al diode; I-V characteristics; space charge limited current (SCLC); impedance spectroscopy (IS);
D O I
10.1016/j.stam.2006.11.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Investigations of the electrical characteristics of benzylated cyclodextrins (beta-CDs (Bz)) diodes are reported. We present current voltage characteristics and impedance spectroscopy measurements performed on partially benzylated cyclodextrins beta-CDs (Bz) thin films in sandwich structures ITO/beta-CDs (Bz)/Al. The static electrical characterizations show a space charge limited conduction (SCLC) and a conductivity with power low frequency behavior characteristic of a hopping transport in disordered materials. The impedance spectra can be discussed in terms of an equivalent circuit model designed as a parallel resistor R-P and capacitor C-P network in series with resistor R-S. We extract numerical values of these parameters by fitting experimental data. Their evolution with bias voltages has shown that the SCLC mechanism is characterized by an exponential trap distribution. We estimated from the capacitance voltage characteristic an acceptor concentration of about 10(11) cm(-3) due to trap states. (c) 2006 NIMS and Elsevier Ltd. All rights reserved.
引用
收藏
页码:772 / 779
页数:8
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