Influence of sublimation surface on mass transport in AlN crystal growth by physical vapor transport process

被引：1

作者：

Fu, Danyang ^{[1
,2
,3
]}

Wang, Qikun ^{[4
]}

Zhang, Gang ^{[1
,2
,3
]}

Li, Zhe ^{[1
,2
,3
]}

Huang, Jiali ^{[4
]}

Wang, Jiang ^{[1
,2
,3
]}

Wu, Liang ^{[4
]}

机构：

[1] Shanghai Univ, State Key Lab Adv Special Steel, Shanghai 200072, Peoples R China

[2] Shanghai Univ, Shanghai Key Lab Adv Ferromet, Shanghai 200072, Peoples R China

[3] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

[4] Ultratrend Technol Co Ltd, Room 518,Bldg 3,503 Shunfeng Rd, Hangzhou 311199, Zhejiang, Peoples R China

来源：

AIP ADVANCES | 2022年 / 12卷 / 05期

基金：

中国国家自然科学基金;

关键词：

THERMAL-STRESS; SIMULATION;

D O I：

10.1063/5.0090077

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A series of numerical experiments were performed to investigate the influence of the sublimation surface on mass transport during the aluminum nitride (AlN) growth process. The distribution of Al partial pressure is strongly affected by the cover of the sublimation interface. The morphology of the growth interface can be controlled by the cover of the sublimation interface to achieve the growth of a specific crystal shape. Based on the same temperature field, the influence of sublimation interface cover on the growth rate indicates that temperature and temperature gradient are not the main limiting factors of the growth rate and further verifies that Al partial pressure gradient is the rate-limiting step. Under the growth system and specific growth conditions, a smooth growth interface can be obtained by using [0, 2/6] sublimation interface cover, so as to realize the rapid growth of high quality AlN crystals. (C) 2022 Author(s).

引用

页数：8

共 21 条

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