共 50 条
- [32] On the role of interdiffusion during the growth of Ge on Si(001) and Si(111) Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 2000, 183 : 95 - 102
- [33] On the role of interdiffusion during the growth of Ge on Si(001) and Si(111) DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2000, 183-1 : 95 - 102
- [34] Si wires growth by using of magnetron sputtering method. INTERNATIONAL CONFERENCE ON MICRO- AND NANOELECTRONICS 2009, 2010, 7521
- [35] Growth and characterization of ge thin films with graded Si1-xGex buffer on Si substrate by dual targets magnetron sputtering Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2019, 40 (02): : 549 - 555
- [36] Mixed Ge-Si dimer growth at the Ge/Si(001)-(2 × 1) surface Physical Review Letters, 1995, 75 (13):
- [38] Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering PHYSICAL REVIEW B, 2004, 70 (03): : 035413 - 1