Spatially resolved photoluminescence and Raman scattering experiments on the GaN substrate interface

被引：44

作者：

Siegle, H

Thurian, P

Eckey, L

Hoffmann, A

Thomsen, C

Meyer, BK

Amano, H

Akasaki, I

Detchprohm, T

Hiramatsu, K

机构：

[1] TECH UNIV MUNICH,PHYS DEPT E16,D-87547 GARCHING,GERMANY

[2] MEIJO UNIV,NAGOYA,AICHI,JAPAN

[3] NAGOYA UNIV,NAGOYA,AICHI 46801,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 09期

关键词：

D O I：

10.1063/1.115947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present results from spatially resolved photoluminescence and Raman experiments on the substrate interface region of wurtzite GaN layers. We show that the broad photoluminescence band with an intensity maximum at 2.4 eV is not an intrinsic property of GaN. We found that this photoluminescence band is strong only near the interface. Our investigations reveal that both the substrate interface and a region of structural reorientation of the layer near the interface act as a source of the photoluminescence. (C) 1996 American Institute of Physics.

引用

页码：1265 / 1266

页数：2

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