The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots

被引：12
作者：
Kim, Sunghoon [1 ]
Park, Jaehyun [1 ]
Kim, Sungwoo [1 ]
Jung, Won [2 ]
Sung, Jaeyoung [2 ]
Kim, Sang-Wook [1 ]
机构：
[1] Ajou Univ, Dept Mol Sci & Technol, Suwon 443749, South Korea
[2] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea
来源：
JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2010年 / 346卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
Type-II quantum dots; Core-shell; InP; CdSe; Bandgap; HIGH-QUALITY INP; RAPID SYNTHESIS; NANOCRYSTALS; PHOTOPHYSICS; SHELLS;
D O I：
10.1016/j.jcis.2010.03.030
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. (C) 2010 Elsevier Inc. All rights reserved.
引用
收藏
页码：347 / 351
页数：5
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