Novel Planar Gunn Diode Operating in Fundamental Mode up to 158 GHz

被引：28

作者：

Li, Chong ^{[1
]}

Khalid, A. ^{[1
]}

Pilgrim, N. ^{[2
]}

Holland, M. C. ^{[1
]}

Dunn, G. ^{[2
]}

Cumming, D. S. R. ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Aberdeen, Sch Engn Phys Sci, Aberdeen AB24 SFX, Scotland

来源：

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) | 2009年 / 193卷

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/1742-6596/193/1/012029

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.

引用

页数：4

共 9 条

[1]

Alekseev E, 2001, IEICE T ELECTRON, VE84C, P1462

[2]

EISELE H, 2006, ELECTRON LETT, V42, P385

[3] Hot electron injector Gunn diode for advanced driver assistance systems [J].

Foerster, A. ;

Lepsa, M. I. ;

Freundt, D. ;

Stock, J. ;

Montanari, S. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (03) :545-558

[4] SELF-CONSISTENT CALCULATIONS OF THE TWO-DIMENSIONAL ELECTRON-DENSITY IN MODULATION-DOPED SUPERLATTICES [J].

GOMES, VMS ;

CHAVES, AS ;

LEITE, JR ;

WORLOCK, JM .

PHYSICAL REVIEW B, 1987, 35 (08) :3984-3989

[5] A planar Gunn diode operating above 100 GHz [J].

Khalid, A. ;

Pilgrim, N. J. ;

Dunn, G. A. ;

Holland, A. C. ;

Stanley, C. R. ;

Thayne, I. G. ;

Cumming, D. R. S. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (10) :849-851

[6] Design and fabrication of planar GaAs Gunn diodes [J].

Kim, Mi-Ra ;

Lee, Seong-Dae ;

Chae, Yeon-Sik ;

Rhee, Jin-Koo .

IEICE TRANSACTIONS ON ELECTRONICS, 2008, E91C (05) :693-698

[7] Gunn oscillations in planar heterostructure diodes [J].

Pilgrim, N. J. ;

Khalid, A. ;

Dunn, G. M. ;

Cumming, D. R. S. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (07)

[8]

SCHOLLHORNN CJ, 2004, J MICROWAVE OPTOELEC, V3, P81

[9]

SINGH BN, 2009, INT J ELECTONICS CIR, V3, P32

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