Low lattice thermal conductivity in arc-melted GeTe with Ge-deficient crystal structure

被引:14
|
作者
Serrano-Sanchez, F. [1 ]
Funes, M. [1 ]
Nemes, N. M. [2 ]
Dura, O. J. [3 ]
Martinez, J. L. [1 ]
Prado-Gonjal, J. [1 ,4 ]
Fernandez-Diaz, M. T. [5 ]
Alonso, J. A. [1 ]
机构
[1] CSIC, ICMM, Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
[2] Univ Complutense Madrid, Dept Fis Mat, E-28040 Madrid, Spain
[3] Univ Castilla La Mancha, Dept Fis Aplicada, E-13071 Ciudad Real, Spain
[4] Univ Complutense Madrid, Dept Quim Inorgan, E-28040 Madrid, Spain
[5] Inst Laue Langevin, BP 156X, F-38042 Grenoble, France
关键词
THERMOELECTRIC-MATERIALS; HIGH-PERFORMANCE; BAND-STRUCTURE; ENHANCEMENT; DEFECTS; FIGURE;
D O I
10.1063/1.5043359
中图分类号
O59 [应用物理学];
学科分类号
摘要
GeTe is a well-known thermoelectric material, with transport properties strongly dependent on the composition and crystal structure. Phase-pure polycrystalline GeTe has been prepared by a straightforward arc-melting technique, and its structural and physical properties are studied by neutron powder diffraction (NPD), electron microscopy, calorimetry, and transport measurements. The structural analysis from NPD data reveals a conspicuous Ge deficiency in the bulk structure (similar to 7% atomic vacancies), confirmed by the Hall-carrier concentration. The analysis of the atomic displacement parameters shows strong anisotropy of Ge ellipsoids, revealing a considerable anharmonicity of the chemical bonds. Concerning the thermoelectric properties, the samples display high electrical conductivity and reduced lattice contribution to the total thermal conductivity, exhibiting record-low 0.8 W m(-1) K-1 at 770 K, as a consequence of the highly defective crystal structure. Both are essential ingredients of useful thermoelectric materials, indicating the applicability of defective GeTe in polycrystalline form. Published by AIP Publishing.
引用
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页数:4
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