Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

被引：46

作者：

Damilano, B. ^{[1
]}

Vezian, S. ^{[1
]}

Brault, J. ^{[1
]}

Alloing, B. ^{[1
]}

Massies, J. ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, Parc Sophia Antipolis Rue B Gregory, F-06560 Valbonne, France

来源：

NANO LETTERS | 2016年 / 16卷 / 03期

关键词：

Top-down fabrication; thermal etching; GaN; nanowire; quantum-disk; microphotoluminescence; MOLECULAR-BEAM EPITAXY; INGAN QUANTUM DOTS; FORMATION MECHANISMS; GROWTH; INTERDIFFUSION; TEMPERATURE; EVAPORATION; PHOTONICS; NANORODS; NITRIDE;

D O I：

10.1021/acs.nanolett.5b04949

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Post-growth in situ partial SiNx masking of GaN-based epitaxial layers grown in a molecular beam epitaxy reactor is used to get GaN selective area sublimation (SAS) by high temperature annealing. Using this top-down approach, nanowires (NWs) with nanometer scale diameter are obtained from GaN and In Ga1-xN/GaN quantum well epitaxial structures. After GaN regrowth on In Ga1-xN/GaN NWs resulting from SAS, In Ga1-xN quantum disks (QDisks) with nanometer sizes in the three dimensions are formed. Low temperature microphotoluminescence experiments demonstrate-QDisk multilines photon emission around 3 eV with individual line widths of 1-2 meV.

引用

收藏

页码：1863 / 1868

页数：6

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[1] On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy [J].

Alloing, B. ;

Vezian, S. ;

Tottereau, O. ;

Vennegues, P. ;

Beraudo, E. ;

Zuniga-Perez, J. .

APPLIED PHYSICS LETTERS, 2011, 98 (01)

[2]

[Anonymous], 2000, BLUE LASER DIODE COM

[3]

[Anonymous], WIDE BAND GAP SEMICO

[4] Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN [J].

Arita, Munetaka ;

Kako, Satoshi ;

Iwamoto, Satoshi ;

Arakawa, Yasuhiko .

APPLIED PHYSICS EXPRESS, 2012, 5 (12)

[5] Ultra long and Defect-Free GaN Nanowires Grown by the HVPE Process [J].

Avit, Geoffrey ;

Lekhal, Kaddour ;

Andre, Yamina ;

Bougerol, Catherine ;

Reveret, Francois ;

Leymarie, Joel ;

Gil, Evelyne ;

Monier, Guillaume ;

Castelluci, Dominique ;

Trassoudaine, Agnes .

NANO LETTERS, 2014, 14 (02) :559-562

[6] GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid [J].

Chen, Weijie ;

Lin, Jiali ;

Hu, Guoheng ;

Han, Xiaobiao ;

Liu, Minggang ;

Yang, Yibin ;

Wu, Zhisheng ;

Liu, Yang ;

Zhang, Baijun .

JOURNAL OF CRYSTAL GROWTH, 2015, 426 :168-172

[7] Direct comparison of catalyst-free and catalyst-induced GaN nanowires [J].

Cheze, Caroline ;

Geelhaar, Lutz ;

Brandt, Oliver ;

Weber, Walter M. ;

Riechert, Henning ;

Muench, Steffen ;

Rothemund, Ralph ;

Reitzenstein, Stephan ;

Forchel, Alfred ;

Kehagias, Thomas ;

Komninou, Philomela ;

Dimitrakopulos, George P. ;

Karakostas, Theodoros .

NANO RESEARCH, 2010, 3 (07) :528-536

[8] Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation [J].

Chowdhury, Faqrul A. ;

Mi, Zetian ;

Kibria, Md G. ;

Trudeau, Michel L. .

APL MATERIALS, 2015, 3 (10)

[9] Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells [J].

Chuo, CC ;

Lee, CM ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :314-316

[10] Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms [J].

Consonni, V. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (10) :699-712

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