A 20-mW G-band monolithic driver amplifier using 0.07-μm InPHEMT

被引：29

作者：

Huang, P. ^{[1
]}

Lai, R. ^{[1
]}

Grundbacher, R. ^{[1
]}

Gorospe, B. ^{[1
]}

机构：

[1] Northrop Grumman, Redondo Beach, CA 90278 USA

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

HEMT; InP; millimeter wave amplifiers; MMIC amplifier;

D O I：

10.1109/MWSYM.2006.249795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a four-stage driver amplifier MTMC covering 160 GHz to 195 GHz is reported. The amplifier uses 0.07-mu m T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs with 2-mil substrate thickness. With two MMICs cascaded in a WR-5 housing, the assembly exhibits 25 - 40 dB linear gain from 160 GHz to 195 GHz When biased at 1.2V, 10-mW saturated output power and 6.5% power-added-efficiency are achieved. 20-mW saturated output power is obtained when 2V drain voltage is applied. The performance of the reported driver amplifier represents state-of-the-art power performance achieved at G-band.

引用

页码：806 / 809

页数：4

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