A novel CDM-like discharge effect during Human Body Model (HBM) ESD stress

被引：0

作者：

Axelrad, V ^{[1
]}

Huh, Y ^{[1
]}

Chen, JW ^{[1
]}

Bendix, P ^{[1
]}

机构：

[1] SEQUOIA Design Syst, Woodside, CA USA

来源：

SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interactions between ESD protection devices and other components of a chip can lead to complex and not easily anticipated discharge bevahior. Triggering of a protection MOSFET is equivalent to the closing of a fast switch and can cause substantial transient discharge currents. The peak value of this current depends on the chip capacitance, resistance, properties of the protection clamp, etc. Careful optimization of the protection circuit is therefore necessary to avoid current overstress and circuit failure.

引用

页码：115 / 118

页数：4