Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

We fabricate and characterize a set of dual-gated graphene field effect transistors using a novel physical vapor deposition technique in which titanium is evaporated onto the graphene channel in 10 angstrom cycles and oxidized in ambient to form a top-gate dielectric. A combination of X-ray photoemission spectroscopy, ellipsometry, and transmission electron microscopy suggests that the titanium is oxidizing in situ to titanium dioxide. Electrical characterization of our devices yields a dielectric constant of Kappa = 6.9 with final mobilities above 5500 cm(2)/(Vs). Low temperature analysis of the gate-leakage current in the devices gives a potential barrier of 0.78 eV in the conduction band and a trap depth of 45 meV below the conduction band.