A highly linear broadband CMOS LNA employing noise and distortion cancellation

被引：21
|
作者：
Chen, Wei-Hung [1 ]
Liu, Gang [1 ]
Zdravko, Boos [2 ]
Niknejad, Ali M. [1 ]
机构：
[1] Univ Calif Berkeley, Berkeley Wireless Res Ctr, Berkeley, CA 94720 USA
[2] Infineon Technol, D-81739 Munich, Germany
来源：
2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/RFIC.2007.380833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a broadband very low 3(rd)- order intermodulation inductor-less low-noise amplifier (LNA) implemented in 0.13 mu m CMOS technology. The LNA consists of a common-gate input stage for wideband impedance matching, followed by two parallel common source amplifiers which perform noise and distortion cancellation. Third-order distortion due to amplifier's second-order interaction is further minimized by employing a low second-order distortion PMOS/NMOS input pair. This LNA achieves +16 dBm IIP3 in both the 900 MHz and 2 GHz bands. The LNA maintains minimum internal gain 14.5 dB, noise figure below 2.6 dB from 800 MHz-2.1 GHz while drawing 11.6 mA from a supply of 1.5V.
引用
收藏
页码：61 / +
页数：2
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