A highly linear broadband CMOS LNA employing noise and distortion cancellation

被引：21

作者：

Chen, Wei-Hung ^{[1
]}

Liu, Gang ^{[1
]}

Zdravko, Boos ^{[2
]}

Niknejad, Ali M. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Berkeley Wireless Res Ctr, Berkeley, CA 94720 USA

[2] Infineon Technol, D-81739 Munich, Germany

来源：

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/RFIC.2007.380833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a broadband very low 3(rd)- order intermodulation inductor-less low-noise amplifier (LNA) implemented in 0.13 mu m CMOS technology. The LNA consists of a common-gate input stage for wideband impedance matching, followed by two parallel common source amplifiers which perform noise and distortion cancellation. Third-order distortion due to amplifier's second-order interaction is further minimized by employing a low second-order distortion PMOS/NMOS input pair. This LNA achieves +16 dBm IIP3 in both the 900 MHz and 2 GHz bands. The LNA maintains minimum internal gain 14.5 dB, noise figure below 2.6 dB from 800 MHz-2.1 GHz while drawing 11.6 mA from a supply of 1.5V.

引用

页码：61 / +

页数：2

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