Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

被引：28

作者：

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Liu, Bo ^{[1
]}

Wu, Liangcai ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 99卷 / 04期

关键词：

TRANSITIONS;

D O I：

10.1007/s00339-010-5708-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO2-rich amorphous phase) has been observed in annealed GST-HfO2 composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO2 based cell was due to the reduced programming volume by incorporating HfO2 into GST. This work clearly reveals the highly promising potential of GST-HfO2 composite films for application in PCM.

引用

页码：767 / 770

页数：4

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