Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

被引：28
|
作者：
Song, Sannian [1 ]
Song, Zhitang [1 ]
Liu, Bo [1 ]
Wu, Liangcai [1 ]
Feng, Songlin [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 99卷 / 04期
关键词：
TRANSITIONS;
D O I：
10.1007/s00339-010-5708-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO2-rich amorphous phase) has been observed in annealed GST-HfO2 composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO2 based cell was due to the reduced programming volume by incorporating HfO2 into GST. This work clearly reveals the highly promising potential of GST-HfO2 composite films for application in PCM.
引用
收藏
页码：767 / 770
页数：4
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