Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

被引：3
作者：
Li, Gaofang [1 ,2 ]
Huang, Renjie [1 ]
Huang, Jingguo [2 ]
Zhang, Wenjie [3 ]
Cui, Haoyang [1 ]
Xia, Nenghong [1 ]
Huang, Zhiming [2 ]
Chu, Junhao [2 ]
Ma, Guohong [3 ]
机构：
[1] Shanghai Univ Elect Power, Coll Elect & Informat Engn, Shanghai 200090, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Shanghai Univ, Dept Phys, Lab Ultrafast Photon, Shanghai 200444, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 07期
基金：
上海市自然科学基金; 中国国家自然科学基金;
关键词：
terahertz radiation; gallium selenide; sulfur doped; optical rectification; phase-matching; DAST CRYSTAL; GENERATION; POWER; GASE;
D O I：
10.35848/1882-0786/ac06ad
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm(-2) and azimuthal angle of 0(o). The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.
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页数：5
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