Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films

被引:46
作者
Hellerstedt, Jack [1 ,2 ]
Edmonds, Mark T. [1 ,2 ]
Ramakrishnan, Navneeth [3 ,4 ]
Liu, Chang [1 ,2 ]
Weber, Bent [1 ,2 ]
Tadich, Anton [5 ]
O'Donnell, Kane M. [6 ]
Adam, Shaffique [3 ,4 ,7 ]
Fuhrer, Michael S. [1 ,2 ]
机构
[1] Monash Univ, Sch Phys & Astron, Clayton, Vic 3800, Australia
[2] Monash Univ, Monash Ctr Atomically Thin Mat, Clayton, Vic 3800, Australia
[3] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore
[4] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117551, Singapore
[5] Australian Synchrotron, Clayton, Vic 3168, Australia
[6] Curtin Univ, Perth, WA 6102, Australia
[7] Yale NUS Coll, 6 Coll Ave East, Singapore 138614, Singapore
基金
澳大利亚研究理事会; 新加坡国家研究基金会;
关键词
Topological Dirac semimetal; thin film growth; scanning tunneling microscopy; magnetotransport; MAGNETORESISTANCE; GRAPHENE;
D O I
10.1021/acs.nanolett.6b00638
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Topological Dirac semimetals (TDS) are three-dimensional analogues of graphene, with linear electronic dispersions in three dimensions. Nanoscale confinement of TDSs in thin films is a necessary step toward observing the conventional-to-topological quantum phase transition (QPT) with increasing film thickness, gated devices for electric-field control of topological states, and devices with surface-state-dominated transport phenomena. Thin films can also be interfaced with superconductors (realizing a host for Majorana Fermions) or ferromagnets (realizing Weyl Fermions or T-broken topological states). Here we report structural and electrical characterization of large-area epitaxial thin films of TDS Na3Bi on single crystal Al2O3[0001] substrates. Charge carrier mobilities exceeding 6,000 cm(2)/(V s) and carrier densities below 1 x 10(18) cm(-3) are comparable to the best single crystal values. Perpendicular magnetoresistance at low field shows the perfect weak antilocalization behavior expected for Dirac Fermions in the absence of intervalley scattering. At higher fields up to 0.5 T anomalously large quadratic magnetoresistance is observed, indicating that some aspects of the low field magnetotransport (mu B < 1) in this TDS are yet to be explained.
引用
收藏
页码:3210 / 3214
页数:5
相关论文
共 34 条
[1]   A self-consistent theory for graphene transport [J].
Adam, Shaffique ;
Hwang, E. H. ;
Galitski, V. M. ;
Das Sarma, S. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397
[2]   Conductivity corrections for topological insulators with spin-orbit impurities: Hikami-Larkin-Nagaoka formula revisited [J].
Adroguer, P. ;
Liu, Weizhe E. ;
Culcer, D. ;
Hankiewicz, E. M. .
PHYSICAL REVIEW B, 2015, 92 (24)
[3]   Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface [J].
Bansal, Namrata ;
Kim, Yong Seung ;
Edrey, Eliav ;
Brahlek, Matthew ;
Horibe, Yoichi ;
IidaD, Keiko ;
Tanimura, Makoto ;
Li, Guo-Hong ;
Feng, Tian ;
Lee, Hang-Dong ;
Gustafsson, Torgny ;
Andrei, Eva Y. ;
Oh, Seongshik .
THIN SOLID FILMS, 2011, 520 (01) :224-229
[4]  
Chen J., 2010, Phys. Rev. Lett, V105, P1
[5]   Charge transport and inhomogeneity near the minimum conductivity point in graphene [J].
Cho, Sungjae ;
Fuhrer, Michael S. .
PHYSICAL REVIEW B, 2008, 77 (08)
[6]   Carrier screening, transport, and relaxation in three-dimensional Dirac semimetals [J].
Das Sarma, S. ;
Hwang, E. H. ;
Min, Hongki .
PHYSICAL REVIEW B, 2015, 91 (03)
[7]  
Drew H. D., 2015, PRIVATE CORRES
[8]   Axial anomaly and longitudinal magnetoresistance of a generic three-dimensional metal [J].
Goswami, Pallab ;
Pixley, J. H. ;
Das Sarma, S. .
PHYSICAL REVIEW B, 2015, 92 (07)
[9]  
Hall E.H., 1879, Am. J. Math, V2, P287, DOI [DOI 10.2307/2369245, 10.2307/2369245]
[10]   Thickness and growth-condition dependence of in-situ mobility and carrier density of epitaxial thin-film Bi2Se3 [J].
Hellerstedt, Jack ;
Edmonds, Mark T. ;
Chen, J. H. ;
Cullen, William G. ;
Zheng, C. X. ;
Fuhrer, Michael S. .
APPLIED PHYSICS LETTERS, 2014, 105 (17)