Highly reliable THz hermetic detector based on InGaAs/InP Schottky barrier diode

被引：8

作者：

Shin, Jun-Hwan ^{[1
]}

Park, Dong Woo ^{[1
]}

Lee, Eui Su ^{[1
]}

Kim, Mugeon ^{[1
]}

Lee, Dong Hun ^{[2
]}

Lee, Il-Min ^{[1
]}

Park, Kyung Hyun ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Terahertz Res Sect, Daejeon 34129, South Korea

[2] Elect & Telecommun Res Inst, Photon Wireless Convergence Components Res Sect, Daejeon 34129, South Korea

来源：

INFRARED PHYSICS & TECHNOLOGY | 2021年 / 115卷

关键词：

THz wave detector; Schottky barrier diode; Zero-bias detection; Reliability test; Hermetic package; DESIGN;

D O I：

10.1016/j.infrared.2021.103736

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We demonstrate on n-InGaAs/n+-InP hetero-epitaxial structure based low-barrier Schottky barrier diode with integrated antenna for broadband THz detection. These devices showed refined and uniform nonlinear rectifying characteristics. Based on this device, a compact and robust hermetic packaged module was fabricated. The developed module showed stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt change of temperature. The detection performance of module was characterized by frequency domain spectroscopy system, and as a result, it had a detectable bandwidth of 0.1-0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1.10-9 W/Hz0.5 at 300 GHz.

引用

页数：5

共 44 条

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