Interfacial reactions during sputter deposition of Ta and TaN films on organosilicate glass: XPS and TEM results

被引:54
作者
Wilks, J. A.
Magtoto, N. P.
Kelber, J. A.
Arunachalam, V.
机构
[1] Univ N Texas, Dept Chem, Denton, TX 76203 USA
[2] Texas Instruments Inc, Dallas, TX 75243 USA
关键词
diffusion barrier; dielectrics; physical vapor deposition (PVD); tantalum; tantalum nitride; transmission electron microscopy; X-ray photoelectron spectroscopy (XPS);
D O I
10.1016/j.apsusc.2007.01.020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The evolution of the interface between organosilicate glass (OSG) and sputter deposited Ta or TAN films has been characterized by X-ray phototelectron spectroscopy (XPS). Cross-sectional TEM (XTEM) was also used to analyze Ta/OSG and TaN/OSG/interfaces for samples formed under different deposition conditions. XPS data show that Ta deposition onto OSG results in formation of an interphase between I and 2 mn thick composed of oxidized Ta and C. Metallic Ta is then formed on top of the interfacial region. In contrast, Ta-rich TaN formation occurs with some nitridation of the substrate, but with no significant interphase formation. The XPS data are consistent with the XTEM data. The XTEM results for Ta/OSG indicate a spatially irregular interface over a length scale of similar to 2 nm, while results for TaN/OSG indicate a spatially abrupt region. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:6176 / 6184
页数:9
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