A Comparative Study on Si Activation in GaAs Between Laser Annealing and Rapid Thermal Annealing

被引：2

作者：

Ong, C. Y. ^{[1
]}

Pey, K. L. ^{[1
]}

Ng, C. M. ^{[2
]}

Ong, B. S. ^{[1
]}

Wong, C. P. ^{[3
]}

Shen, Z. X. ^{[3
]}

Xing, Z. X. ^{[2
]}

Wang, X. C. ^{[4
]}

Zheng, H. Y. ^{[4
]}

Chan, L. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

[2] GLOBALFOUNDRIES Singapore Private Ltd, Singapore 738406, Singapore

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[4] Singapore Inst Mfg Technol, Singapore 638075, Singapore

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 06期

关键词：

N-GAAS;

D O I：

10.1149/1.3376388

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work studies the use of pulsed laser annealing (LA) to realize high n-type dopant activation in GaAs. The results show that the defects induced by ion implantation can be effectively eliminated by pulsed LA. Besides preserving a good crystalline structure, a much higher dopant activation can be achieved by LA compared to the conventional rapid thermal annealing technique. The high levels of dopant activation obtained in the laser-annealed GaAs samples are attributed to the out-diffusion of the Zn dopant atoms (the p-type dopant of the GaAs substrate) as well as the Ga atoms from the substrate. Diodes activated by an appropriate fluence exhibit excellent rectifying characteristics. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3376388] All rights reserved.

引用

页码：II200 / II202

页数：3

共 17 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS
ABSTREITER, G
BAUSER, E
FISCHER, A
PLOOG, K
[J]. APPLIED PHYSICS, 1978, 16 (04): : 345 - 352
[2] ALLMEN MFV, 1982, LASER ANNEALING SEMI, P450
[3] Chin HC, 2008, INT EL DEVICES MEET, P383
[4] Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
Chong, YF
Pey, KL
Wee, ATS
See, A
Chan, L
Lu, YF
Song, WD
Chua, LH
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3197 - 3199
[5] CHOW PP, 1991, THIN FILM PROCESSES, V2, P160
[6] Diffusion and activation of Si implanted into GaAs
Jakiela, R
Barcz, A
[J]. VACUUM, 2003, 70 (2-3) : 97 - 101
[7] JONES SW, DIFFUSION SILICON, P21
[8] ION-IMPLANTATION AND LASER TREATMENT OF III-V-COMPOUND SEMICONDUCTOR - A BRIEF REPORT
OGALE, SB
[J]. BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 51 - 56
[9] Dopant activation in subamorphized silicon upon laser annealing
Ong, K. K.
Pey, K. L.
Lee, P. S.
Wee, A. T. S.
Wang, X. C.
Chong, Y. F.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
[10] Schubert E F, 1993, DOPING 3 5 SEMICONDU

← 1 2 →