Ground state normalized binding energy of impurity in asymmetric quantum wells under hydrostatic pressure

被引：8

作者：

Akbas, H. ^{[1
]}

Sucu, S. ^{[1
]}

Minez, S. ^{[1
]}

Dane, C. ^{[2
]}

Akankan, O. ^{[1
]}

Erdogan, I. ^{[1
]}

机构：

[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey

[2] Trakya Univ, Dept Math, TR-22030 Edirne, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 94卷

关键词：

Normalized binding energy; Impurity; Asymmetric well; Pressure; DONOR IMPURITY; OPTICAL RECTIFICATION; HYDROGENIC DONOR; ELECTRIC-FIELD; DOT;

D O I：

10.1016/j.spmi.2016.04.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied and computed variationally the impurity energy, impurity energy turning points, and ground state normalized binding energy as functions of the impurity position for shallow impurity in asymmetric quantum wells under hydrostatic pressure. We found that the normalized binding energy significantly depends on the asymmetry of the well, besides depending on,the impurity position and hydrostatic pressure. Also, the dependence of the positive normalized binding energy on the pressure can be used to find out the degree of the asymmetry of the well or the impurity position in the well. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：131 / 137

页数：7

共 25 条

[1] Hydrogenic donor in asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells [J].