Defects, stress and abnormal shift of the (002) diffraction peak for Li-doped ZnO films

被引：63

作者：

Lin, Yow-Jon ^{[1
]}

Wang, Mu-Shan ^{[2
]}

Liu, Chia-Jyi ^{[2
]}

Huang, Hsueh-Jung ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 24期

关键词：

ZnO; XRD; Defect; Photoluminescence; Doping; THIN-FILMS; BEHAVIOR;

D O I：

10.1016/j.apsusc.2010.06.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li-i) and Li substituting for Zn (Li-Zn) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li-Zn to Li-i, involving the formation of Zn vacancies (V-Zn). In addition, the interaction between these defects (that is, Li-Zn, Li-i, V-Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7623 / 7627

页数：5

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