Improved ohmic contact on n-type 4H-SiC

被引：15

作者：

Gao, Y ^{[1
]}

Tang, Y ^{[1
]}

Hoshi, M ^{[1
]}

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 10期

关键词：

Aluminum - Annealing - Interfaces (materials) - Intermetallics - Nickel - Ohmic contacts - Titanium - X ray diffraction analysis;

D O I：

10.1016/S0038-1101(00)00099-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a study of a Ti/Ni/Al contact on n-type I H-SIC and compare it with Al/Ni/Al contact. X-ray diffraction analysis was used to identify the intermetallic compound formed at the interface and four-point probe method was employed to determine the specific contact resistivity, rho (c). The contacts were ohmic as-deposited (10(-2) to 10(-3) Omega cm(2)). After annealing at 1000 degreesC, the specific contact resistivity was 4.5 x 10(-5) Omega cm(2), which is two times lower than that of the Al/Ni/Al contact prepared in the same way. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1875 / 1878

页数：4

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