Intense red-emitting phosphors for LED solid-state lighting

被引：48

作者：

Wang, Xiao-xiao ^{[1
]}

Wang, Jing ^{[1
]}

Shi, Jian-xin ^{[1
]}

Su, Qiang ^{[1
]}

Gong, Meng-lian ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Chem & Chem Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2007年 / 42卷 / 09期

关键词：

inorganic compounds; optical materials; laser annealing; luminescence; optical properties;

D O I：

10.1016/j.materresbull.2006.11.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phosphors Gd2-xEux(MoO4)(3)(x = 0.20, 0.40, 0.60, 0.80,1.0,1.2,1.4, 1.6,1.8, 2.0), Gd0.8-xYxEu1.2(MoO4)(3)(x = 0. 1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8) and Gd(0.2)y(0.6-x)EU(1.2)Sm(x)(MoO4)(3)(x = 0.02, 0.024, 0.028, 0.032, 0.036, 0.04) were prepared by solidstate reaction technique at 950 degrees C. The presence of the Y3+ and Sm3+ ions strengthen and broaden the absorption of the phosphors at similar to 400 nm. The intense red-emitting phosphor Gd0.2Y0.572Eu1.2SM0.028(MoO4)3 with orthorhombic structure was obtained. Both EU3+ and Sm3+ f-f transition absorptions are observed in the excitation spectra, the main emission line is at 616 nm (D-5(0)-> F-7(2) transition of Eu3+ and the chromaticity coordinates (x = 0.66, y = 0.33) is very close to the NTSC standard values (x = 0.67, y = 0.33). It is considered to be an efficient red-emitting phosphor for GaN-based light emitting diode (LED). (C) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1669 / 1673

页数：5

共 13 条

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