Variable thermal conductivity and hyperbolic two-temperature theory during magneto-photothermal theory of semiconductor induced by laser pulses

被引:71
|
作者
Mahdy, A. M. S. [1 ,2 ]
Lotfy, Kh [2 ,5 ]
El-Bary, A. [3 ]
Tayel, Ismail M. [4 ]
机构
[1] Taif Univ, Coll Sci, Dept Math, POB 11099, At Taif 21944, Saudi Arabia
[2] Zagazig Univ, Fac Sci, Dept Math, POB 44519, Zagazig, Egypt
[3] Arab Acad Sci Technol & Maritime Transport, POB 1029, Alexandria, Egypt
[4] Majmaah Univ, Coll Sci Al Zulfi, Dept Math, Al Majmaah 11952, Saudi Arabia
[5] Taibah Univ, Fac Sci, Dept Math, Madinah, Saudi Arabia
关键词
GENERALIZED THERMOELASTICITY; ELASTIC-WAVES; TEMPERATURE; FREQUENCY; GRAVITY;
D O I
10.1140/epjp/s13360-021-01633-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The main goal of this work is to investigate the interaction impact between three propagated waves. In this case, the elastic wave, plasma wave and thermal waves are obtained in the context of the hyperbolic generalized two-temperature theory. The governing equations are studied during the photothermal theory. The impact of external magnetic field and laser pulse are obtained which they fall on the outer surface of a semiconductor medium. The thermal conductivity of semiconductor material is investigated in a variable case. When the coupled between photothermal theory and thermoelasticity theory is occurred, three various models of the photo-thermoelasticity theory are obtained. The integral transforms technique in two-dimensional (2D) deformation is applied to solve the main equations. The double Fourier and Laplace transforms with some initial conditions are used as example of integral transforms technique. The inversion of the double transforms with some thermal-elastic-mechanical-plasma boundary conditions is applied numerically to obtain the complete solutions. Some comparisons during three various models in external magnetic field with variable thermal conductivity Si (silicon) material of photo-thermoelasticity theory are performed.
引用
收藏
页数:21
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