Fast electronic resistance switching involving hidden charge density wave states

被引:170
作者
Vaskivskyi, I. [1 ,2 ]
Mihailovic, I. A. [1 ,3 ]
Brazovskii, S. [4 ,5 ]
Gospodaric, J. [1 ]
Mertelj, T. [1 ]
Svetin, D. [1 ]
Sutar, P. [1 ]
Mihailovic, D. [1 ,2 ,6 ]
机构
[1] Jozef Stefan Inst, Complex Matter F7, Jamova 39, SI-1000 Ljubljana, Slovenia
[2] Univ Ljubljana, Fac Math & Phys, Jadranska 19, SI-1000 Ljubljana, Slovenia
[3] Univ Ljubljana, Fac Elect Engn, Trzaska 21, SI-1000 Ljubljana, Slovenia
[4] Univ Paris 11, LPTMS CNRS, UMR8626, Bat 425, F-91405 Orsay, France
[5] Natl Univ Sci & Technol MISiS, Leninski Av 4, Moscow 119049, Russia
[6] Jozef Stefan Int Postgrad Sch, Jamova 39, SI-1000 Ljubljana, Slovenia
关键词
MOTT-INSULATING STATE; PHASE-TRANSITION; CRYSTALS;
D O I
10.1038/ncomms11442
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of ions, but their speed is limited by slow nucleation and inhomogeneous percolative growth. Here we demonstrate fast resistance switching in a charge density wave system caused by pulsed current injection. As a charge pulse travels through the material, it converts a commensurately ordered polaronic Mott insulating state in 1T-TaS2 to a metastable electronic state with textured domain walls, accompanied with a conversion of polarons to band states, and concurrent rapid switching from an insulator to a metal. The large resistance change, high switching speed (30 ps) and ultralow energy per bit opens the way to new concepts in non-volatile memory devices manipulating all-electronic states.
引用
收藏
页数:6
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