Interfacial structure of Ta2O5/Si film and photoactivity

被引：1

作者：

Wu Yan ^{[1
]}

Yao Wen-Qing ^{[1
]}

Zhu Yong-Fa ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China

来源：

ACTA PHYSICO-CHIMICA SINICA | 2007年 / 23卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Ta2O5/Si thin film; Auger electron spectroscopy; interface diffusion; interface reaction; photocatalytic activity;

D O I：

10.1016/S1872-1508(07)60038-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tantalum oxide (Ta2O5) thin film photocatalysts were prepared on single crystal Si(110) substrates via sol-gel and spin coating methods. Ta2O5 crystallinity was improved, and the crystal size became larger with the increasing of heat treating temperature. The interface diffusion and reaction of the film were studied by using Auger electron spectroscopy (AES) depth profile and line shape analysis. Diffusion was dominant at the interface layer when the calcination, temperature was below 700 degrees C. When the temperature reached 800 degrees C, both interface diffusion and reaction occurred. The photocatalytic activity was studied using aqueous salicylic acid as a degradation probe molecule under UV-light irradiation. It was found that Ta2O5/Si film showed a photocatalytic activity similar to that of TiO2/Si film.

引用

页码：625 / 629

页数：5

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