Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films

被引：20

作者：

Slotte, J.

Tuomisto, F.

Saarinen, K.

Moe, C. G.

Keller, S.

DenBaars, S. P.

机构：

[1] Aalto Univ, Phys Lab, FIN-02015 Helsinki, Finland

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

关键词：

D O I：

10.1063/1.2721132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510 nm photoluminescence transition. The reduction in the W parameter when the [Si]/[Al+Ga] fraction in the gas phase is above 3x10(-4) indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510 nm. (c) 2007 American Institute of Physics.

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