High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition

被引：85
作者：
Chen, XH
Xu, J
Wang, RM
Yu, DP [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
来源：
ADVANCED MATERIALS | 2003年 / 15卷 / 05期
关键词：
D O I：
10.1002/adma.200390097
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
GaN nanowires with diameters in the quantum-confinement size regime (4-10 nm, similar to10 nm in Figure) are prepared on large-area substrates through catalytic reaction of Ga and NH3 in a hot-filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.
引用
收藏
页码：419 / +
页数：4
相关论文
共 19 条
[1]   Semiconductor clusters, nanocrystals, and quantum dots [J].
Alivisatos, AP .
SCIENCE, 1996, 271 (5251) :933-937
[2]   Logic circuits with carbon nanotube transistors [J].
Bachtold, A ;
Hadley, P ;
Nakanishi, T ;
Dekker, C .
SCIENCE, 2001, 294 (5545) :1317-1320
[3]  
Chen CC, 2000, ADV MATER, V12, P738, DOI 10.1002/(SICI)1521-4095(200005)12:10<738::AID-ADMA738>3.0.CO
[4]  
2-J
[5]  
Chen XL, 2000, ADV MATER, V12, P1432, DOI 10.1002/1521-4095(200010)12:19<1432::AID-ADMA1432>3.0.CO
[6]  
2-X
[7]   Large-scale synthesis of single crystalline gallium nitride nanowires [J].
Cheng, GS ;
Zhang, LD ;
Zhu, Y ;
Fei, GT ;
Li, L ;
Mo, CM ;
Mao, YQ .
APPLIED PHYSICS LETTERS, 1999, 75 (16) :2455-2457
[8]   Laser-assisted catalytic growth of single crystal GaN nanowires [J].
Duan, XF ;
Lieber, CM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (01) :188-189
[9]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[10]   Room-temperature blue gallium nitride laser diode [J].
Fasol, G .
SCIENCE, 1996, 272 (5269) :1751-1752
12