Fractal dimension, growth mode and residual stress of metal thin films

被引：25

作者：

Guisbiers, G. ^{[1
]}

Van Overschelde, O. ^{[1
]}

Wautelet, M. ^{[1
]}

Leclere, Ph ^{[1
]}

Lazzaroni, R. ^{[1
]}

机构：

[1] Univ Mons, Lab Chem Novel Mat, B-7000 Mons, Belgium

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 04期

关键词：

D O I：

10.1088/0022-3727/40/4/024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of tantalum, molybdenum, palladium and aluminium deposited on silicon are studied by means of atomic force microscopy. The morphology and the grain size, as well as the fractal dimension, of the thin films are deduced and compared with intrinsic stress experimental data on the same films. A correlation is found between the surface morphology, the growth mode, the fractal dimension and the intrinsic residual stress of the films.

引用

页码：1077 / 1079

页数：3

共 19 条

[1] MICROSTRUCTURE AND RESIDUAL-STRESS OF VERY THIN MO FILMS [J].