Probing the origin of excitonic states in monolayer WSe2

被引:153
作者
Huang, Jiani [1 ]
Hoang, Thang B. [1 ]
Mikkelsen, Maiken H. [1 ,2 ]
机构
[1] Duke Univ, Dept Phys, Durham, NC 27708 USA
[2] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
基金
美国国家科学基金会;
关键词
BINDING-ENERGY; 2-DIMENSIONAL SEMICONDUCTORS; TEMPERATURE-DEPENDENCE; VALLEY POLARIZATION; PHOTOLUMINESCENCE; MOS2; BAND; WS2;
D O I
10.1038/srep22414
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Two-dimensional transition metal dichalcogenides (TMDCs) have spurred excitement for potential applications in optoelectronic and valleytronic devices; however, the origin of the dynamics of excitons, trions, and other localized states in these low dimensional materials is not well-understood. Here, we experimentally probed the dynamics of excitonic states in monolayer WSe2 by investigating the temperature and polarization dependent photoluminescence (PL) spectra. Four pronounced PL peaks were identified below a temperature of 60 K at near-resonant excitation and assigned to exciton, trion and localized states from excitation power dependence measurements. We find that the localized states vanish above 65 K, while exciton and trion emission peaks remain up to room temperature. This can be explained by a multi-level model developed for conventional semiconductors and applied to monolayer TMDCs for the first time here. From this model, we estimated a lower bound of the exciton binding energy of 198 meV for monolayer WSe2 and explained the vanishing of the localized states. Additionally, we observed a rapid decrease in the degree of circular polarization of the PL at increasing temperatures indicating a relatively strong electron-phonon coupling and impurity-related scattering. Our results reveal further insight into the excitonic states in monolayer WSe2 which is critical for future practical applications.
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页数:7
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