Development of SPICE compatible thermal model of silicon MEMS piezoresistive pressure sensor for CMOS- MEMS integration

被引：0
|
作者：
Pramanik, C. [1 ]
Banerjee, S. [1 ]
Mukherjee, D. [1 ]
Saha, H. [2 ]
机构：
[1] Bengal Engn & Sci Univ Shibpur, Dept Elect & Telecommun Engn, Howrah, India
[2] Univ Jadavpur, Elect & Telecommun Engn Dept, Kolkata, India
来源：
2006 IEEE SENSORS, VOLS 1-3 | 2006年
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D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
In this paper, the effects of electrical heating in a silicon MEMS piezoresistive pressure sensor have been analyzed analytically and verified experimentally with a view to design energy efficient sensor node network where the sensors are operated for a prolonged time. For the integration of the MEMS sensor with the CMOS circuits, a SPICE compatible thermal equivalent circuit has been developed for the purpose, which imports the values of thermal resistance, time constant, and thermal capacitance by a dynamically linked library from the external user defined model.
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页码：761 / +
页数：2
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