Origin and distribution of charge carriers in LaAlO3-SrTiO3 oxide heterostructures in the high carrier density limit

被引：12

作者：

Mukherjee, Sumanta ^{[1
]}

Pal, Banabir ^{[1
]}

Choudhury, Debraj ^{[1
,2
]}

Sarkar, Indranil ^{[3
]}

Drube, Wolfgang ^{[3
]}

Gorgoi, Mihaela ^{[4
]}

Karis, Olof ^{[5
]}

Takagi, H. ^{[6
,7
]}

Matsuno, Jobu ^{[8
]}

Sarma, D. D. ^{[1
,5
,9
,10
]}

机构：

[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bengaluru 560012, Karnataka, India

[2] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India

[3] Deutsch Elektronen Synchrotron DESY, Notkestr 85, D-22607 Hamburg, Germany

[4] Helmholtz Zentrum Berlin Mat & Energie GmbH, Albert Einstein Str 15, D-12489 Berlin, Germany

[5] Dept Phys & Astron, Box 516, S-75120 Uppsala, Sweden

[6] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan

[7] Max Plank Inst Solid State Res, D-70569 Stuttgart, Germany

[8] RIKEN, CEMS, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[9] CSIR, NISE, New Delhi 110001, India

[10] Jawaharlal Nehru Ctr Adv Sci Res, Bengaluru 560064, India

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 24期

关键词：

PHOTOELECTRON-SPECTROSCOPY; INTERNAL HETEROSTRUCTURE; ELECTRON-GAS; INTERFACES; SUPERCONDUCTIVITY; FERROMAGNETISM;

D O I：

10.1103/PhysRevB.93.245124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using hard x-ray photoelectron spectroscopywith variable photon energy (2-8 keV), we address the distribution of charge carriers in the prototypical LaAlO3 (LAO) and SrTiO3 (STO) oxide heterostructures with high carrier densities (10(17) cm(-2)). Our results demonstrate the presence of two distinct charge distributions in this system: one tied to the interface with a similar to 1-nm width and similar to 2-5 x 10(14)-cm(-2) carrier concentration, while the other appears distributed nearly homogeneously through the bulk of STO corresponding to a much larger carrier contribution. Our results also establish bimodal oxygen vacancies, namely on top of LAO and throughout STO, quantitatively establishing these as the origin of the observed bimodal depth distribution of charge carriers in these highly doped sample.

引用

页数：8

共 63 条

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